Interconnect apparatus and method

ABSTRACT

A method comprises bonding a first chip on a second chip, depositing a first hard mask layer over a non-bonding side of the first chip, depositing a second hard mask layer over the first hard mask layer, etching a first substrate of the first semiconductor chip using the second hard mask layer as a first etching mask and etching the IMD layers of the first chip and the second chip using the first hard mask layer as a second etching mask.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to, and claims priority to U.S. Provisional Application No. 61/780,465, titled, “Interconnect Apparatus and Method” filed on Mar. 13, 2013, which is herein incorporated by reference.

BACKGROUND

The semiconductor industry has experienced rapid growth due to continuous improvements in the integration density of a variety of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from repeated reductions in minimum feature size (e.g., shrink the semiconductor process node towards the sub-20 nm node), which allows more components to be integrated into a given area. As the demand for miniaturization, higher speed and greater bandwidth, as well as lower power consumption and latency has grown recently, there has grown a need for smaller and more creative packaging techniques of semiconductor dies.

As semiconductor technologies further advance, stacked semiconductor devices have emerged as an effective alternative to further reduce the physical size of a semiconductor device. In a stacked semiconductor device, active circuits such as logic, memory, processor circuits and the like are fabricated on different semiconductor wafers. Two or more semiconductor wafers may be installed on top of one another to further reduce the form factor of the semiconductor device.

Two semiconductor wafers may be bonded together through suitable bonding techniques. The commonly used bonding techniques include direct bonding, chemically activated bonding, plasma activated bonding, anodic bonding, eutectic bonding, glass frit bonding, adhesive bonding, thermo-compressive bonding, reactive bonding and/or the like. Once two semiconductor wafers are bonded together, the interface between two semiconductor wafers may provide an electrically conductive path between the stacked semiconductor wafers.

One advantageous feature of stacked semiconductor devices is much higher density can be achieved by employing stacked semiconductor devices. Furthermore, stacked semiconductor devices can achieve smaller form factors, cost-effectiveness, increased performance and lower power consumption.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a cross sectional view of a stacked semiconductor device prior to a bonding process in accordance with various embodiments of the present disclosure;

FIG. 2 illustrates a cross sectional view of the semiconductor device shown in FIG. 1 after a bottom anti-reflection coating (BARC) layer and a plurality of hard mask layers are formed over the first semiconductor wafer in accordance with various embodiments of the present disclosure;

FIG. 3 illustrates a cross sectional view of the semiconductor device shown in FIG. 2 after a patterning process is applied to the hard mask layers and the BARC layer of the first semiconductor wafer in accordance with various embodiments of the present disclosure;

FIG. 4 illustrates a cross sectional view of the semiconductor device shown in FIG. 3 after an etching process is applied to the substrate of the first semiconductor wafer in accordance with various embodiments of the present disclosure;

FIG. 5 illustrates a cross section view of the semiconductor device shown in FIG. 4 after another etching process is applied to the semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 6 illustrates a cross sectional view of the semiconductor device shown in FIG. 5 after the remaining photoresist layer has been removed in accordance with various embodiments of the present disclosure;

FIG. 7 illustrates a cross section view of the semiconductor device shown in FIG. 6 after a dielectric layer is deposited over the semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 8 illustrates a cross sectional view of the semiconductor device shown in FIG. 7 after an etching process is applied to some portions of the dielectric layer in accordance with in accordance with various embodiments of the present disclosure;

FIG. 9 illustrates a cross sectional view of the semiconductor device shown in FIG. 6 after a conductive material has been filled in the openings in accordance with various embodiments of the present disclosure;

FIG. 10 illustrates a cross section view of the semiconductor device shown in FIG. 9 after a chemical mechanical polish (CMP) process is applied to the top surface of the semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 11 illustrates a cross sectional view of the semiconductor device shown in FIG. 10 after a dielectric layer is formed on the semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 12 illustrates a cross sectional view of another stacked semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 13 illustrates a cross sectional view of yet another stacked semiconductor device in accordance with various embodiments of the present disclosure;

FIG. 14 illustrates a cross sectional view of a backside illuminated imager sensor including a stacked wafer structure in accordance with various embodiments of the present disclosure;

FIG. 15 illustrates a top view of the hard mask in accordance with various embodiments of the present disclosure; and

FIG. 16 illustrates another top view of the hard mask in accordance with various embodiments of the present disclosure.

Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferred embodiments in a specific context, a method for forming interconnect structures for a stacked semiconductor device. The invention may also be applied, however, to a variety of semiconductor devices. Hereinafter, various embodiments will be explained in detail with reference to the accompanying drawings.

FIG. 1 illustrates a cross sectional view of a stacked semiconductor device prior to a bonding process in accordance with various embodiments of the present disclosure. Both the first semiconductor wafer 110 and the second semiconductor wafer 210 include a semiconductor substrate (e.g., first substrate 102 and second substrate 202) and a plurality of interconnect structures (e.g., metal lines 106, 108, 206 and 208) formed over the semiconductor substrate. The first semiconductor wafer 110 is used as an example to illustrate the detailed structure of the semiconductor wafers prior to a bonding process.

As shown in FIG. 1, the first semiconductor wafer 110 may comprises a first substrate 102 and a plurality of inter-metal dielectric layers 104 formed over the first substrate 102. In addition, a plurality of metal lines such as metal lines 106 and 108 are formed in the inter-metal dielectric layers 104.

The first substrate 102 may be formed of silicon, although it may also be formed of other group III, group IV, and/or group V elements, such as silicon, germanium, gallium, arsenic, and combinations thereof. The first substrate 102 may also be in the form of silicon-on-insulator (SOI). The SOI substrate may comprise a layer of a semiconductor material (e.g., silicon, germanium and/or the like) formed over an insulator layer (e.g., buried oxide and/or the like), which is formed in a silicon substrate. In addition, other substrates that may be used include multi-layered substrates, gradient substrates, hybrid orientation substrates, any combinations thereof and/or the like.

The first substrate 102 may further comprise a variety of electrical circuits (not shown). The electrical circuits formed on the first substrate 102 may be any type of circuitry suitable for a particular application. In accordance with some embodiments, the electrical circuits may include various n-type metal-oxide semiconductor (NMOS) and/or p-type metal-oxide semiconductor (PMOS) devices such as transistors, capacitors, resistors, diodes, photo-diodes, fuses and/or the like.

The electrical circuits may be interconnected to perform one or more functions. The functions may include memory structures, processing structures, sensors, amplifiers, power distribution, input/output circuitry and/or the like. One of ordinary skill in the art will appreciate that the above examples are provided for illustrative purposes only and are not intended to limit the various embodiments to any particular applications.

The inter-metal dielectric layers 104 are formed over the first substrate 102. As shown in FIG. 1, the inter-metal dielectric layers 104 may comprise a plurality of metal lines such as metal lines 106 and 108.

The metal lines 106 and 108 may be made through any suitable formation process (e.g., lithography with etching, damascene, dual damascene, or the like) and may be formed using suitable conductive materials such as copper, aluminum, aluminum alloys, copper alloys or the like.

As shown in FIG. 1, the first semiconductor wafer 110 will be stacked on top of the second semiconductor wafer 210. In some embodiments, a plurality of bonding pads are formed in the first semiconductor wafer 110 and the second semiconductor wafer 210 respectively. Furthermore, the bonding pads located at the second semiconductor wafer 210 are aligned face-to-face with their corresponding bonding pads located at the first semiconductor wafer 110. The first semiconductor wafer 110 and the second semiconductor wafer 210 are bonded together through suitable bonding techniques such as direct bonding.

In accordance with some embodiments, in a direct bonding process, the connection between the first semiconductor wafer 110 and the second semiconductor wafer 210 can be implemented through metal-to-metal bonding (e.g., copper-to-copper bonding), dielectric-to-dielectric bonding (e.g., oxide-to-oxide bonding), metal-to-dielectric bonding (e.g., oxide-to-copper bonding), any combinations thereof and/or the like.

It should be noted that the bonding show in FIG. 1 may be at wafer level. In the wafer-level bonding, wafers 110 and 210 are bonded together, and are then sawed into dies. Alternatively, the bonding may be performed at the chip level.

It should further be noted that the first semiconductor wafer 110 may be a backside illumination sensor and the second semiconductor wafer 210 may be a logic circuit. The backside illuminated image sensor may be formed in an epitaxial layer over a silicon substrate. According to the fabrication process of backside illuminated image sensors, the silicon substrate has been removed in a backside thinning process. A portion of epitaxial layer remains. A photo active region is formed in the remaining epitaxial layer.

The photo active regions may comprise, for example, photo-diodes formed by implanting impurity ions into the epitaxial layer. Furthermore, the photo active regions may be a PN junction photo-diode, a PNP photo-transistor, an NPN photo-transistor or the like. In accordance with an embodiment, the photo active regions may comprise a p-type layer formed on an n-type region, wherein the n-type region is formed on an epitaxial layer grown from a p-type semiconductor substrate.

The second semiconductor wafer 210 may comprise a logic circuit. The logic circuit may be an analog-to-digital converter. In addition, the logic circuit may be a data processing circuit, various embodiments may also include other circuits connected to a backside illuminated image sensor, such as a memory circuit, a bias circuit, a reference circuit and the like.

After the first semiconductor wafer 110 is bonded on the second semiconductor wafer 210, a thinning process may be applied to the backside of the first semiconductor wafer in accordance with an embodiment. According to the fabrication processes of backside illuminated image sensors, the substrate is thinned until the epitaxial layer is exposed. More particularly, the backside the substrate may be thinned to a thickness in a range from about 2 um to about 2.15 um. Such a thin substrate layer allows light to pass through the substrate and hit photo diodes embedded in the substrate without being absorbed by the substrate.

The thinning process may be implemented by using suitable techniques such as grinding, polishing and/or chemical etching. In accordance with an embodiment, the thinning process may be implemented by using a chemical mechanical polishing (CMP) process. In a CMP process, a combination of etching materials and abrading materials are put into contact with the back side of the substrate and a grinding pad (not shown) is used to grind away the back side of the substrate until a desired thickness is achieved

FIG. 2 illustrates a cross sectional view of the semiconductor device shown in FIG. 1 after a bottom anti-reflection coating (BARC) layer and a plurality of hard mask layers are formed over the first semiconductor wafer in accordance with various embodiments of the present disclosure. The BARC layer 112 is formed on a backside of the first substrate 102. Throughout the description, the side of the first substrate 102 adjacent to the BARC layer 112 is referred to the backside of the first substrate 102.

The BARC layer 112 may be formed of a nitride material, an organic material, an oxide material and the like. The BARC layer 112 may be formed using suitable techniques such as chemical vapor deposition (CVD) and/or the like.

A first hard mask layer 113 is formed over the BARC layer 112. A second hard mask layer 115 is formed over the first hard mask layer 113. In some embodiments, the first hard mask layer 113 may be formed of polysilicon. The second hard mask layer 115 is formed of oxide. Throughout the description, the first hard mask layer 113 is alternatively referred to as a poly hard mask layer 113. The second hard mask layer 115 is alternatively referred to as an oxide hard mask layer 115. The poly and oxide hard mask layers may be formed using suitable techniques such as CVD and/or the like.

FIG. 3 illustrates a cross sectional view of the semiconductor device shown in FIG. 2 after a patterning process is applied to the hard mask layers and the BARC layer of the first semiconductor wafer in accordance with various embodiments of the present disclosure. A patterned mask 302 such as a photoresist mask and/or the like may be formed over the oxide hard mask layer 115 using suitable deposition and photolithography techniques. A suitable etching process, such as a reactive ion etch (RIE) or other dry etch, an anisotropic wet etch, or any other suitable anisotropic etch or patterning process may be applied to the hard mask layers and the BARC layer. As a result, a plurality of openings 301 and 303 are formed in the hard mask layers and the BARC layer.

After the openings 301 and 303 have been formed, the remaining photoresist layer (e.g., mask 302) may be removed by using suitable photoresist stripping techniques such as chemical solvent cleaning, plasma ashing, dry stripping and/or the like. The photoresist stripping techniques are well known and hence are not discussed in further detail herein to avoid repetition.

FIG. 4 illustrates a cross sectional view of the semiconductor device shown in FIG. 3 after an etching process is applied to the substrate of the first semiconductor wafer in accordance with various embodiments of the present disclosure. After the photoresist mask has been removed by a suitable removal process, a suitable etching process, such as a dry etching, a wet etching or any other suitable patterning process may be applied to the first substrate 102 of the first semiconductor wafer 110. During the etching process, the oxide layer 115 may function as a hard mask layer. As shown in FIG. 4, a plurality of openings 114 and 116 are formed in the first substrate 102. The etching process may be performed on the first substrate 102 until the first inter-metal dielectric layer 104 is exposed. Subsequently, the oxide hard mask layer 115 may be removed by a suitable removal process.

FIG. 5 illustrates a cross section view of the semiconductor device shown in FIG. 4 after another etching process is applied to the semiconductor device in accordance with various embodiments of the present disclosure. A suitable etching process, such as a dry etch, an anisotropic wet etch, or any other suitable anisotropic etch or patterning process, may be performed on the semiconductor device to form openings 504 and 506. During the etching process, the poly layer 113 and the metal lines 106, 108 and 206 may function as hard mask layers.

The openings 504 and 506 are respective extensions of the openings 114 and 116 shown in FIG. 4. In particular, the openings 504 and 506 extend through the inter-metal dielectric layers 104 and 204 as well as the bonding interface of two stacked wafers. As shown in FIG. 5, the metal lines 106, 108, 206 and 208 are exposed after the openings 504 and 506 have been formed.

It should further be noted that the metal lines 106 and 108 are formed of suitable metal materials such as copper, which is of a different etching rate (selectivity) from the inter-metal dielectric layers (e.g., the inter-metal dielectric layers 104 and 204). As such, the metal lines 106 and 108 may function as a hard mask layer for the etching process of the inter-metal dielectric layers 104 and 204. A selective etching process may be employed to etch the inter-metal dielectric layers 104 and 204 rapidly while etching only a portion of the metal lines 106 and 108. As shown in FIG. 5, the exposed portion of the hard mask layer (e.g., metal lines 106 and 108) may be partially etched away, thereby forming a recess such as the recess 502 as shown in FIG. 5. The depth of the recess 502 may vary depending on a variety of applications and design needs.

FIG. 6 illustrates a cross sectional view of the semiconductor device shown in FIG. 5 after the remaining poly layer has been removed in accordance with various embodiments of the present disclosure. During the etching process shown in FIG. 5, the poly layer 113 may be partially etched away or fully etched away. After the etching process, a suitable removal process may be employed to remove the remaining portion of the poly layer 113. As shown in FIG. 6, the top surface of the BARC layer 112 is exposed after the poly layer 113 has been removed.

FIG. 7 illustrates a cross section view of the semiconductor device shown in FIG. 6 after a dielectric layer is deposited over the semiconductor device in accordance with various embodiments of the present disclosure. As shown in FIG. 7, a dielectric layer 702 is formed over the bottoms and sidewalls of the openings 701 and 703. Furthermore, the dielectric layer 702 is formed over the top surface of the semiconductor device as shown in FIG. 7.

The dielectric layer 702 may be formed of various dielectric materials commonly used in integrated circuit fabrication. For example, the dielectric layer 702 may be formed of silicon dioxide, silicon nitride or a doped glass layer such as boron silicate glass and the like. Alternatively, dielectric layer may be a layer of silicon nitride, a silicon oxynitride layer, a polyamide layer, a low dielectric constant insulator or the like. In addition, a combination of the foregoing dielectric materials may also be used to form the dielectric layer 702. In accordance with some embodiments, the dielectric layer 702 may be formed using suitable techniques such as sputtering, oxidation, CVD and/or the like.

FIG. 8 illustrates a cross sectional view of the semiconductor device shown in FIG. 7 after an etching process is applied to some portions of the dielectric layer in accordance with in accordance with various embodiments of the present disclosure. The dielectric layer 702 may be patterned and portions of the dielectric layer 702 may be removed. As shown in FIG. 8, the remaining dielectric layer may include two portions. The first portion is formed along the sidewalls of the bottom trench. The second portion is formed along the sidewalls of the upper trench. Throughout the description, the first portion is alternatively referred to as a first dielectric layer 801. The second portion is alternatively referred to as a second dielectric layer 803.

The removal process of some portions of the dielectric layer 702 may be a suitable etching process such as wet-etching, dry-etching and/or the like. The detailed operations of either the dry etching process or the wet etching process are well known in the art, and hence are not discussed herein to avoid repetition.

FIG. 9 illustrates a cross sectional view of the semiconductor device shown in FIG. 8 after a conductive material has been filled in the openings in accordance with various embodiments of the present disclosure. In some embodiments, a plurality of auxiliary layers such as a seed layer may be deposited prior to a plating process, through which the conductive material is filled into the openings.

The seed layer (not shown) may be may be formed of copper, nickel, gold, any combination thereof and/or the like. The seed layer may be formed by suitable deposition techniques such as PVD, CVD and/or the like.

Once the seed layer has been deposited in the openings, a conductive material, which includes tungsten, titanium, aluminum, copper, any combinations thereof and/or the like, is filled into the openings, forming conductive plugs 902 and 904. In some embodiments, the conductive material may be filled in the openings through an electroplating process.

FIG. 10 illustrates a cross section view of the semiconductor device shown in FIG. 9 after a CMP process is applied to the top surface of the semiconductor device in accordance with various embodiments of the present disclosure. A planarization process, such as CMP, etch back step and the like, may be performed to planarize the top surface of the semiconductor device. As shown in FIG. 10, a portion of the conductive material has been removed as a result. As shown in FIG. 10, there may be two conductive plugs 902 and 904 formed in the semiconductor device after the CMP process is performed on the semiconductor device.

As shown in FIG. 10, each conductive plug (e.g., conductive plugs 902 and 904) may comprise two portions. A first portion is from the metal line 206 to the hard mask layer formed by the metal lines 106 and 108. The first portion is of a width W1 as shown in FIG. 10. A second portion is from the hard mask layer to the backside of the first substrate 102. The second portion is of a width W2 as shown in FIG. 10. In some embodiments, W2 is greater than or equal to W1.

FIG. 11 illustrates a cross sectional view of the semiconductor device shown in FIG. 10 after a dielectric layer is formed on the semiconductor device in accordance with various embodiments of the present disclosure. The dielectric layer 1102 may comprise commonly used dielectric materials, such as silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, combinations thereof, and multi-layers thereof. The dielectric layer 1102 may be deposited over the semiconductor device through suitable deposition techniques such as sputtering, CVD and the like.

The conductive plugs (e.g., conductive plug 902) include two portions as described above with respect to FIG. 10. The portion from the hard mask layer (e.g., metal line 106) to the metal line 206 may be alternatively referred to as a three-dimensional structure 1115 throughout the description.

One advantageous feature of the stacked wafer having the conductive plugs 902 and 904 shown in FIG. 11 is that the active circuits of both semiconductor wafers are connected to each other through a single conductive plug (e.g., conductive plug 902). Such a single conductive plug helps to further reduce form factor. Furthermore, in comparison to stacked semiconductor devices connected by multiple conductive plugs, the single conductive plug coupled between two semiconductor wafers shown in FIG. 11 helps to cut power consumption and prevent parasitic interference.

It should be noted while FIG. 11 illustrates two semiconductor wafers stacked together, one skilled in the art will recognize that the stacked semiconductor device shown in FIG. 11 is merely an example. There may be many alternatives, variations and modifications. For example, the stacked semiconductor device may accommodate more than two semiconductor wafers.

FIG. 12 illustrates a cross sectional view of another stacked semiconductor device in accordance with various embodiments of the present disclosure. The stacked semiconductor device 1200 is similar to the stacked semiconductor device 100 shown in FIG. 11 except that the hard mask layer is formed by contacts, which is located adjacent to the interface between the first substrate 102 and the inter-metal dielectric layers 104.

The contacts may be formed in an inter-layer dielectric layer (not shown). The inter-layer dielectric layer may comprise a material such as boron phosphorous silicate glass (BPSG), although any suitable dielectrics may be used for either layer. The inter-layer dielectric layer may be formed using a process such as PECVD, although other processes may alternatively be used.

The contacts 1006 and 1008 may be formed through the inter-layer dielectric layer with suitable photolithography and etching techniques. Generally, these photolithography techniques involve depositing a photoresist material, which is masked, exposed, and developed to expose portions of the inter-layer dielectric layer that are to be removed. The remaining photoresist material protects the underlying material from subsequent processing steps, such as etching.

The contacts 1006 and 1008 may comprise a barrier/adhesion layer (not shown) to prevent diffusion and provide better adhesion for the contacts 1006 and 1008. In some embodiments, the contacts 1006 and 1008 may be formed of any suitable conductive material, such as a highly-conductive, low-resistive metal, elemental metal, transition metal, or the like. In accordance with an embodiment, the contacts 1006 and 1008 are formed of tungsten, although other materials, such as copper, aluminum and/or the like, could alternatively be utilized. In an embodiment in which the contacts 1006 and 1008 are formed of tungsten, the contacts 1006 and 1008 may be deposited by CVD techniques known in the art, although any method of formation could alternatively be used.

As shown in FIG. 12, the conductive plugs (e.g., conductive plugs 1202 and 1204) include two portions. The portion from the hard mask layer (e.g., contact 1006) to the metal line 206 may be alternatively referred to as a three-dimensional structure 1214 throughout the description.

FIG. 13 illustrates a cross sectional view of yet another stacked semiconductor device in accordance with various embodiments of the present disclosure. The stacked semiconductor device 1300 is similar to the stacked semiconductor device 100 shown in FIG. 11 except that the etching hard mask is formed by redistribution lines, which are located adjacent to the interface of two semiconductor wafers.

The redistribution lines 1306 and 1308 may be a single material layer, or a multi-layered structure and may be made of metals such as titanium, titanium nitride, aluminum, tantalum, copper and combinations thereof. The redistribution lines 1306 and 1308 may be made by any suitable method known in the art such as physical vapor deposition (PVD), sputter, CVD, electroplating and/or the like.

The conductive plugs (e.g., conductive plugs 1302 and 1304) include two portions. The portion from the hard mask layer (e.g., redistribution lines 1306 and 1308) to the metal line 206 may be alternatively referred to as a three-dimensional structure 1314 throughout the description.

It should be noted that the first semiconductor wafer 110 may be bonded on the second wafer 210 through a suitable metal-dielectric bonding technique such as a copper-silicon oxide nitride (Cu—SiON) bonding process.

It should further be noted while FIG. 11, FIG. 12 and FIG. 13 illustrate hard mask layers formed by metal lines, contacts and redistribution lines respectively, one skilled in the art will recognize that hard mask layers shown in FIGS. 11-13 are merely examples. There may be many alternatives, variations and modifications. For example, the hard mask layer may be formed by a plurality of isolation regions, poly-silicon regions, any combinations thereof and/or the like.

FIG. 14 illustrates a cross sectional view of a backside illuminated imager sensor including a stacked wafer structure in accordance with various embodiments of the present disclosure. The backside illuminated image sensor 1400 comprises two semiconductor wafers, namely a sensor wafer 1201 and an application-specific integrated circuit (ASIC) wafer 1203. As shown in FIG. 14, the sensor wafer 1201 is stacked on top of the ASIC 1203. In some embodiments, the sensor wafer 1201 and the ASIC wafer 1203 are connected to each other through suitable three-dimensional structures such as the three-dimensional structure 1115 shown in FIG. 11, the three-dimensional structure 1214 shown in FIG. 12, the three-dimensional structure 1314 shown in FIG. 13 and any combinations thereof.

The ASIC wafer 1203 may comprise a plurality of logic circuits such as logic circuits 1206 and 1208. In some embodiments, the logic circuits may be an analog-to-digital converter. However, the logic circuits may be other functional circuits that may be utilized within a backside illuminated image sensor. For example, the logic circuits 1206 and 1208 may be a data processing circuit, a memory circuit, a bias circuit, a reference circuit, any combinations thereof and/or the like.

The ASIC wafer 1203 may further comprise a plurality of interconnection layers and a plurality of metal lines 1220, 1222, 1224 and 1226 embedded in the interconnection layers. The metal lines 1220, 1222, 1224 and 1226 may function as interconnection structures. As indicated by the arrows shown in FIG. 14, the metal lines 1220, 1222, 1224 and 1226 provide signal paths between logic circuits 1206 and 1208, and the sensor wafer 1201.

The metal lines 1220, 1222, 1224 and 1226 may be made through any suitable formation process (e.g., lithography with etching, damascene, dual damascene, or the like) and may be formed using suitable conductive materials such as copper, aluminum, aluminum alloys, copper alloys or the like.

The sensor wafer 1201 is fabricated by CMOS process techniques known in the art. In particular, the sensor wafer 1201 comprises an epitaxial layer over a silicon substrate. According to the fabrication process of backside illuminated image sensors, the silicon substrate has been removed in a backside thinning process until the epitaxial layer is exposed. A portion of epitaxial layer may remain. A p-type photo active region and an n-type photo active region (not shown respectively) are formed in the remaining epitaxial layer.

The photo active regions such as the p-type photo active region and the n-type photo active region may form a PN junction, which functions as a photodiode. As shown in FIG. 14, the imager sensor 1110 may comprise a plurality of photodiodes.

The sensor wafer 1201 may comprise a transistor (not shown). In particular, the transistor may generate a signal related to the intensity or brightness of light that impinges on the photo active regions. In accordance with an embodiment, the transistor may be a transfer transistor. However, the transistor may be an example of the many types of functional transistors that may be utilized within a backside illuminated image sensor. For example, the transistor may include other transistors located within a backside illuminated image sensor, such as a reset transistor, a source follower transistor or a select transistor. All suitable transistors and configurations that may be utilized in an image sensor are fully intended to be included within the scope of the embodiments.

The sensor wafer 1201 may comprise a plurality of interconnection layers and metal lines embedded in the interconnection layers. The metal lines 1120, 1122, 1124 and 1126 may provide signal paths between the sensor wafer 1201 and the ASIC wafer 1203. In particular, as indicated by the arrows shown in FIG. 14, an external signal may enter the backside illuminated image sensor 1400 through the aluminum copper pad 1112, and then reach the metal routing (e.g., metal line 1120) through interconnect structures such through vias (not shown). The external signal may further pass through a three-dimensional structure 1210. The three-dimensional structure 1210 may be the three-dimensional structure 1115 shown in FIG. 11, the three-dimensional structure 1214 shown in FIG. 11, the three-dimensional structure 1314 shown in FIG. 13 and/or any combinations thereof.

After the external signal passes the three-dimensional structure 1210, the external signal may reach the logic circuit 1206 through the metal routing (e.g., metal line 1220) of the ASIC wafer 1203.

When a signal leaves the logic circuit 1206, it reaches the image sensor 1110 through a conductive path formed by the metal routing (e.g., metal line 1222) of the ASIC wafer 1203, the three-dimensional structure 1210, the metal routing (e.g., metal line 1122) of the sensor wafer 1201.

After the image sensor 1110 generates a signal, the signal is sent to the logic circuit 1208 through a path formed by the metal routing (e.g., metal line 1124) of the sensor wafer 1201, the three-dimensional structure 1210, the metal routing (e.g., metal line 1224) of the ASIC wafer 1203. Furthermore, the signal may be sent outside of the backside illuminated image sensor 1400 from the logic circuit 1208 through a path formed by the metal routing (e.g., metal line 1226) of the ASIC wafer 1203, the three-dimensional structure 1210, the metal routing (e.g., metal line 1126) of the sensor wafer 1201 and the aluminum copper pad 1114.

The logic circuit 1206 and 1208 may be coupled to aluminum copper pads 1112 and 1114. As shown in FIG. 14, the aluminum copper pads 1112 and 1114 may be formed on the backside of the sensor wafer 1201.

It should be noted that the location of the aluminum copper pads 1112 and 1114 shown in FIG. 14 is merely an example. A person skilled in the art will recognize that there may be many alternatives, modifications and variations. For example, the aluminum copper pads 1112 and 1114 may be formed on the non-bonding side of the ASIC wafer 1203. The form factor of a backside illuminated image sensor can be reduced by forming the aluminum copper pads 1112 and 1114 on the non-bonding side of the ASIC wafer 1203.

One advantageous feature of having input/output terminals formed on the non-bonding side of the ASIC wafer 1203 is that the density as well as quantum efficiency of the backside illuminated image sensor 1400 can be improved as a result.

FIG. 15 illustrates a top view of the hard mask in accordance with various embodiments of the present disclosure. As described above with respect to FIG. 11, FIG. 12 and FIG. 13, the hard mask layers may be formed by metal lines, contacts and redistribution lines respectively. While the cross sectional view 1501 shows the hard mask layer includes two portions (e.g., metal lines 106 and 108), these two portions may be from a continuous ring shaped region as illustrated by the top view 1502. The top view 1502 of the hard mask layer shows the hard mask layer is of a ring shape. The inside diameter of the ring shaped hard mask layer is denoted as W1.

It should be noted that the internal circle of the ring shaped hard mask layer can be replaced by other suitable shapes such as a square as shown by the top view 1504. It is within the scope and spirit of various embodiments of the present disclosure that the top view of the hard mask layer may comprise other shapes, such as, but no limited to oval, triangular, polygonal and/or the like.

FIG. 16 illustrates another top view of the hard mask in accordance with various embodiments of the present disclosure. The top views of FIG. 16 are similar to those shown in FIG. 15 except that the ring shape is replaced by a square with an opening. The top view 1602 shows a square with a square shaped opening. The top view 1604 shows a square with a circular shaped opening.

In accordance with an embodiment, an apparatus comprises a first semiconductor chip including a first substrate, a plurality of first inter-metal dielectric layers and a plurality of first metal lines formed in the first inter-metal dielectric layers over the first substrate, a second semiconductor chip bonded on the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate, a plurality of second inter-metal dielectric layers and a plurality of second metal lines formed in the second inter-metal dielectric layers over the second substrate and a conductive plug.

The conductive plug is coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises a first portion formed over a first side of a hard mask layer, wherein the first portion is of a first width, and wherein the first portion of the conductive plug is isolated from the first inter-metal dielectric layers and the second inter-metal dielectric layers by a first dielectric layer and a second portion formed over a second side of the hard mask layer, wherein the second portion is of a second width greater than or equal to the first width, and wherein the second portion of the conductive plug is isolated from the first inter-metal dielectric layers by a second dielectric layer.

In accordance with an embodiment, a method comprises bonding a first semiconductor chip on a second semiconductor chip, wherein the first semiconductor chip comprises a first substrate, a plurality of first inter-metal dielectric layers and a plurality of first interconnect structures formed in the first inter-metal dielectric layers over the first substrate and the second semiconductor chip comprises a second substrate, a plurality of second inter-metal dielectric layers and a plurality of second interconnect structures formed in the second inter-metal dielectric layers over the second substrate.

The method further comprises depositing a first hard mask layer over a non-bonding side of the first semiconductor chip, depositing a second hard mask layer over the first hard mask layer, etching the first substrate using the second hard mask layer as a first mask, etching the first inter-metal dielectric layers and the second inter-metal dielectric layers to form a plurality of openings, wherein the first hard mask layer and the first interconnect structures are used as a second mask and plating a conductive material in the openings.

In accordance with an embodiment, a method comprises bonding a first semiconductor wafer on a second semiconductor wafer, wherein the first semiconductor wafer comprises a first substrate, first inter-metal dielectric layers and first interconnect structures formed in the first inter-metal dielectric layers and over the first substrate and the second semiconductor wafer comprises a second substrate, second inter-metal dielectric layers and second interconnect structures formed in the second inter-metal dielectric layers and over the second substrate.

The method further comprises depositing a poly layer over a non-bonding side of the first semiconductor wafer, depositing an oxide layer over the poly layer, forming a first opening in the first substrate using a first etching process and using the oxide layer as a first hard mask layer, forming a second opening using a second etching process and using the poly layer and the first interconnect structures as a second hard mask layer, wherein the second opening is formed through the first inter-metal dielectric layers and partially through the second inter-metal dielectric layers and plating a conductive material in the first opening and the second opening.

Although embodiments of the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. 

What is claimed is:
 1. A method comprising: bonding a first semiconductor chip on a second semiconductor chip, wherein: the first semiconductor chip comprises a first substrate, a plurality of first inter-metal dielectric layers and a plurality of first interconnect structures formed in the plurality of first inter-metal dielectric layers over the first substrate; and the second semiconductor chip comprises a second substrate, a plurality of second inter-metal dielectric layers and a plurality of second interconnect structures formed in the plurality of second inter-metal dielectric layers over the second substrate; depositing a first hard mask layer over a non-bonding side of the first semiconductor chip; depositing a second hard mask layer over the first hard mask layer; patterning the first hard mask layer and the second hard mask layer to form a hard mask pattern; after patterning the first hard mask layer and the second hard mask layer to form the hard mask pattern, etching the first substrate using the first hard mask layer and the second hard mask layer as a first mask; removing the entire second hard mask layer; etching the plurality of first inter-metal dielectric layers and the plurality of second inter-metal dielectric layers to form a plurality of openings, wherein the first hard mask layer is used as a second mask to form a first opening of the plurality of openings in an upper portion of the plurality of first inter-metal dielectric layers and the plurality of first interconnect structures are used as a third mask to form a second opening of the plurality of openings in a lower portion of the plurality of first inter-metal dielectric layers and an upper portion of the plurality of second inter-metal dielectric layers; and plating a conductive material in the plurality of openings.
 2. The method of claim 1, further comprising: plating the conductive material in the plurality of openings to form a conductive plug, wherein: a first portion of the conductive plug is adjacent to a bonding side of the first semiconductor chip; and a second portion of the conductive plug is adjacent to the non-bonding side of the first semiconductor chip, and wherein: the second portion is of a width greater than or equal to a width of the first portion of the conductive plug.
 3. The method of claim 1, further comprising: etching the plurality of first inter-metal dielectric layers and the plurality of second inter-metal dielectric layers to form the second opening of the plurality of openings, wherein the first hard mask layer and a plurality of first metal lines formed in the plurality of first inter-metal dielectric layer are used as the third mask.
 4. The method of claim 1, wherein: the first hard mask layer is formed of polysilicon.
 5. The method of claim 1, wherein: the second hard mask layer is formed of oxide.
 6. A method comprising: bonding a first semiconductor wafer on a second semiconductor wafer, wherein: the first semiconductor wafer comprises a first substrate, first inter-metal dielectric layers and first interconnect structures formed in the first inter-metal dielectric layers and over the first substrate; and the second semiconductor wafer comprises a second substrate, second inter-metal dielectric layers and second interconnect structures formed in the second inter-metal dielectric layers and over the second substrate; depositing a polysilicon layer over a non-bonding side of the first semiconductor wafer; depositing an oxide layer over the polysilicon layer; patterning the polysilicon layer and the oxide layer to form a hard mask pattern; after patterning the polysilicon layer and the oxide layer to form the hard mask pattern, forming a first opening in the first substrate using a first etching process and using the polysilicon layer and the oxide layer as a first mask layer; removing the oxide layer prior to forming a second opening using a second etching process and using the polysilicon layer and the first interconnect structures as a second mask layer, wherein the second opening includes a first portion formed through the first inter-metal dielectric layers and a second portion formed partially through the second inter-metal dielectric layers, and wherein a width of the second portion is equal to a distance between two metal lines of the first inter-metal dielectric layers; and plating a conductive material in the first opening and the second opening.
 7. The method of claim 6, further comprising: depositing a bottom anti-reflection coating layer on a non-bonding side of the first semiconductor wafer, wherein the bottom anti-reflection coating layer is formed underneath the polysilicon layer.
 8. The method of claim 6, further comprising: forming the second opening using the polysilicon layer and a plurality of metal lines of the first inter-metal dielectric layers as the second mask layer.
 9. The method of claim 6, wherein: the conductive material is copper.
 10. A method comprising: bonding a first chip on a second chip, wherein: the first chip comprises a first substrate portion and a first interconnect portion, and wherein the first interconnect portion comprises a plurality of first interconnect structures and a first inter-metal dielectric layer; and the second chip comprises a second substrate portion and a second interconnect portion, and wherein the second interconnect portion comprises a plurality of second interconnect structures and a second inter-metal dielectric layer, and wherein a top surface of the first inter-metal dielectric layer of the first interconnect portion is in direct contact with a top surface of the second inter-metal dielectric layer of the second interconnect portion after performing the step of bonding the first chip on the second chip; depositing a first hard mask layer over a non-bonding side of the first chip; depositing a second hard mask layer over the first hard mask layer; patterning the first hard mask layer and the second hard mask layer to form a hard mask pattern; after patterning the first hard mask layer and the second hard mask layer to form the hard mask pattern, based upon the hard mask pattern, removing an exposed portion of the first substrate portion to form a first opening through a first etching process, wherein the second hard mask layer functions as a hard mask layer; and forming a second opening through a second etching process, wherein the first hard mask layer, the plurality of first interconnect structures in the first interconnect portion and the plurality of second interconnect structures in the second interconnect portion function as hard mask layers after the second hard mask layer has been removed prior to the step of forming the second opening through the second etching process, and wherein a width of lower portion of the second opening is equal to a distance between two metal lines of the plurality of first interconnect structures.
 11. The method of claim 10, wherein: the first hard mask layer is formed of polysilicon; and the second hard mask layer is formed of oxide.
 12. The method of claim 10, wherein: the second opening comprising a lower portion and an upper portion, and wherein: the upper portion is in the first interconnect portion; and the lower portion has a first portion in the first interconnect portion and a second portion in the second interconnect portion.
 13. The method of claim 12, wherein: a width of the upper portion of the second opening is equal to a width of the first opening.
 14. The method of claim 10, further comprising: depositing a dielectric layer along sidewalls and bottoms of the first opening and the second opening; removing the dielectric layer on the bottoms of the first opening and the second opening through a third etching process; and plating a conductive material in the first opening and the second opening to form a conductive plug.
 15. The method of claim 10, wherein: the first interconnect structures of the first interconnect portion are metal lines; and the second interconnect structure of the second interconnect portion are metal lines. 